Datasheet > DTM4483S

DTM4483S

更新时间： 2024-11-29 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		肖特基二极管
页数	文件大小	规格书
11页	2149K
描述
P-Channel 30 V (D-S) MOSFET with Schottky Diode

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DTM4483S 数据手册

DTM4483S

www.din-tek.jp

P-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

MOSFET PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

I_D(A)^a

V_DS(V)

R_DS(on)()

Q_g(Typ.)

•

LITTLE FOOT^®Plus Power MOSFET

100 % R_gTested

0.068 at V_GS= - 10 V

0.110 at V_GS= - 4.5 V

- 4.6

- 30

4.6

- 3.4

Compliant to RoHS Directive 2002/95/EC

SCHOTTKY PRODUCT SUMMARY

APPLICATIONS

V_F(V)

•

Battery Management in Notebook PC

V_KA(V)

Diode Forward Voltage

_D(A)^a

•

Non-synchronous Buck Converter in HDD

0.44 V at 1 A

SO-8

Top View

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

V_DS

Limit

- 30

Unit

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

Gate-Source Voltage (MOSFET)

V_KA

V_GS

T_C= 25 °C

T_C= 70 °C

- 4.6

- 3.6

- 3.8^{b, c}

- 3^{b, c}

- 20

I_D

Continuous Drain Current (T_J= 150 °C) (MOSFET)

_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (MOSFET) (t = 300 µs)

_C= 25 °C

_A= 25 °C

- 2

Continuous Source Current (MOSFET Diode Conduction)

- 1.4^{b, c}

- 1.4^b

- 2

I_F

I_FM

Average Forward Current (Schottky)

Pulsed Forward Current (Schottky)

T_C= 25 °C

2.75

_C= 70 °C

_A= 25 °C

1.75

P_D

Maximum Power Dissipation (MOSFET and Schottky)

Operating Junction and Storage Temperature Range

1.75^{b, c}

1.10^{b, c}

T_A= 70 °C

T_J, T_stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient (MOSFET and Schottky)^{b, c, d}

Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)

71.5

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on FR4 board.

c. t  10 s.

d. Maximum under steady state conditions is 120 °C/W.

12 3 4 5 6 7...11

中文翻译

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