Datasheet > DTM4435

DTM4435

更新时间： 2024-11-29 12:51:27

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
8页	305K
描述
P-Channel 30 V (D-S) MOSFET

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DTM4435 数据手册

DT.

www.daysemi.jp

P-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^c

• 100 % R_gand UIS Tested

PRODUCT SUMMARY

V_DS(V)

- 30

0.018

0.031

- 15

_DS(on)() at V_GS= - 10 V

R_DS(on)() at V_GS= - 4.5 V

_D(A)

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

SO-8

Top View

P-Channel MOSFET

ORDERING INFORMATION

Package

SO-8

%5. 4435

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

- 30

UNIT

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

- 15

I_D

Continuous Drain Current

T_C= 125 °C

- 8.7

- 6.2

- 60

I_S

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^a

I_DM

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

- 25

L = 0.1 mH

E_AS

T_C= 25 °C

6.8

Maximum Power Dissipation^a

P_D

T_C= 125 °C

2.3

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

PCB Mount^b

Junction-to-Ambient

°C/W

R_thJF

Junction-to-Foot (Drain)

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

S11-2109 Rev. B, 31-Oct-11

Document Number: 67932

12 3 4 5 6 7 8

中文翻译

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