Datasheet > DTM4425

DTM4425

更新时间： 2024-11-29 12:51:27

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描述
P-Channel 30-V (D-S) MOSFET

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DTM4425 数据手册

DT.

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P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

0.0098 at V_GS= 10 V

0.0165 at V_GS= 4.5 V

•

- 19.7

- 15.2

- 30

27 nC

APPLICATIONS

•

Load Switches

- Notebook PCs

- Desktop PCs

SO-8

Top View

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

_A= 25 °C

- 19.7

- 15.7

- 13^{b, c}

- 10.4^{b, c}

- 50

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

- 4.7

- 2.1^{b, c}

Continous Source-Drain Diode Current

_C= 25 °C

5.7

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.6

Maximum Power Dissipation

P_D

2.5^{b, c}

1.6^{b, c}

- 55 to 150

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

R_thJA

R_thJF

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Document Number: 64732

S09-0314-Rev. A, 02-Mar-09

www.daysemi.jp

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