Datasheet > DTM4420B

DTM4420B

更新时间： 2024-11-29 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
9页	1534K
描述
N-Channel 30-V (D-S) MOSFET Halogen-free

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DTM4420B 数据手册

DTM4420B

www.din-tek.jp

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

• TrenchFET^®Power MOSFET

0.007 at V _GS= 10 V

0.009 at V_GS= 4.5 V

•

Optimized for High-Side Synchronous

6.8 nC

Rectifier Operation

100 % R_gTested

100 % UIS Tested

•

APPLICATIONS

•

Notebook CPU Core

- High-Side Switch

SO-8

Top View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

T_C= 25 °C

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)

I_D

11^{b, c}

9^{b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

3.8

2.1^{b, c}

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

4.5

2.8

P_D

Maximum Power Dissipation

2.5^{b, c}

1.6^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

R_thJA

R_thJF

t ≤ 10 s

Steady State

°C/W

Notes:

a. Base on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

12 3 4 5 6 7...9

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