Datasheet > DTM4410_13

DTM4410_13

更新时间： 2024-11-29 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		测试
页数	文件大小	规格书
9页	1374K
描述
N-Channel 30-V (D-S) MOSFET 100 % Rg and UIS Tested

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DTM4410_13 数据手册

DTM4410

www.din-tek.jp

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

0.0045 at V_GS= 10 V

0.0065 at V_GS= 4.5 V

8 nC

14.5

APPLICATIONS

•

Notebook CPU Core

- High-Side Switch

SO-8

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

13.5

Continuous Drain Current (T_J= 150 °C)

I_D

12^{b, c}

9.6^{b, c}

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

4.5

2.2^{b, c}

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

E_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

3.2

P_D

Maximum Power Dissipation

2.5^{b, c}

1.6^{b, c}

T_A= 70 °C

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

t ≤ 10 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

12 3 4 5 6 7...9

中文翻译

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