Datasheet > DTL9604_13

DTL9604_13

更新时间： 2024-11-28 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
8页	1336K
描述
N-Channel 60 V (D-S) MOSFET Low Qg for High Efficiency

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DTL9604_13 数据手册

DTL9604

www.din-tek.jp

N-Channel 60 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)()

I_D(A)^a

Q_g(Typ.)

100 % R_gand UIS Tested

Low Q_gfor High Efficiency

0.0022 at V_GS= 10 V

0.0025 at V_GS= 6 V

0.0028 at V_GS= 4.5 V

27.5 nC

TO-220AB

APPLICATIONS

• Primary Side Switch

•

POL

Synchronous Rectifier

DC/DC Converter

Amusement System

Industrial

LED Backlighting

G D

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

55^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

55^a

Continuous Drain Current (T_J= 150 °C)

I_D

35.8^{b, c}

28.6^{b, c}

350

55^a

5.6^{b, c}

I_DM

I_S

Pulsed Drain Current (60 µs Pulse Width)

Continuous Source-Drain Diode Current

T_C= 25 °C

T_A= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L =0.1 mH

E_AS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

104

66.6

Maximum Power Dissipation

P_D

6.25^{b, c}

4^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t  10 s

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

°C/W

Steady State

R_thJC

0.9

1.2

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

12 3 4 5 6 7 8

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