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DTL9503 PDF预览

DTL9503

更新时间: 2024-11-28 12:51:27
品牌 Logo 应用领域
鼎日 - DINTEK /
页数 文件大小 规格书
7页 210K
描述
P-Channel 30 V (D-S) MOSFET

DTL9503 数据手册

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DT-  
www.daysemi.jp  
P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Compliant to RoHS Directive 2002/95/EC  
VDS (V)  
RDS(on) ()  
ID (A)a  
75  
Available  
0.007 at VGS = - 10 V  
0.010 at VGS = - 4.5 V  
RoHS*  
- 30  
COMPLIANT  
75  
S
TO-220AB  
TO-263  
G
G
D S  
Top View  
G D S  
D
Top View  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
C
Parameter  
Symbol  
Limit  
20  
Unit  
Gate-Source Voltage  
VGS  
V
T
C = 25 °C  
- 75a  
Continuous Drain Current (TJ = 175 °C)  
ID  
T
C = 125 °C  
- 65  
A
Pulsed Drain Current  
Avalanche Current  
IDM  
IAR  
- 240  
- 60  
Repetitive Avalanche Energyb  
L = 0.1 mH  
EAR  
180  
187d  
mJ  
W
TC = 25 °C (TO-220AB and TO-263)  
TA = 25 °C (TO-263)c  
Power Dissipation  
PD  
3.75  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Limit  
40  
Unit  
PCB Mount (TO-263)c  
Free Air (TO-220AB)  
Junction-to-Ambient  
62.5  
0.8  
°C/W  
Junction-to-Case  
RthJC  
Notes:  
a. Package limited.  
b. Duty cycle 1 %.  
c. When mounted on 1" square PCB (FR-4 material).  
d. See SOA curve for voltage derating.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
1

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