Datasheet > DTL4N60

DTL4N60

更新时间： 2024-11-28 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		栅极栅极驱动
页数	文件大小	规格书
11页	2101K
描述
Power MOSFET Reduced Gate Drive Requirement

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中文翻译

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数据手册

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DTL4N60 数据手册

DTP4N60/DTP4N60F/DTU4N60/DTL4N60

www.din-tek.jp

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Ultra Low Gate Charge

600

• Reduced Gate Drive Requirement

• Enhanced 30 V, V_GSRating

Available

_DS(on)()

V_GS= 10 V

2.2

RoHS*

Q_g(Max.) (nC)

Q_gs(nC)

COMPLIANT

• Reduced C_iss, C_oss, C_rss

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

_gd(nC)

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

TO-251

TO-220AB

TO-220 FULLPAK

TO-252

Top View

G D

N-Channel MOSFET

Top View

DTP4N60

DTP4N60F

DTU4N60

DTL4N60

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C= 100 °C

Continuous Drain Current

_GSat 10 V

I_D

2.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

530

6.2

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

125

3.0

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

°C

for 10 s

300^d

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 25 mH, R_g= 25 , I_AS= 6.2 A (see fig. 12).

c. I_SD 6.2 A, dI/dt  80 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

12 3 4 5 6 7...11

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