Datasheet > DTL40P03

DTL40P03

更新时间： 2024-11-28 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
8页	1838K
描述
P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET

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DTL40P03 数据手册

DTL40P03

www.din-tek.jp

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

Definition

- 40^d

•

TrenchFET^®Power MOSFET

100% R_gTested

100% UIS Tested

Compliant to RoHS Directive 2002/95/EC

0.0055 at V_GS= - 10 V

0.0090 at V_GS= - 4.5 V

- 30

49.5 nC

TO-251

APPLICATIONS

•

Notebook Computer

- Adaptor Switch

- Battery Switch

- Load Switch

P-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

- 30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

- 40^d

- 22.4^{a, b}

- 17.9^{a, b}

- 70

- 40^d

- 4.5^{a, b}

- 30

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

T_C= 25 °C

T_C= 70 °C

P_D

Maximum Power Dissipation

5.0^{a, b}

3.2^{a, b}

- 55 to 150

260

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{e, f}

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

°C/W

Maximum Junction-to-Ambient^{a, c}

t ≤ 10 s

Steady State

Maximum Junction-to-Case

2.1

2.6

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 70 °C/W.

d. Package limited.

12 3 4 5 6 7 8

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