Datasheet > DTL40N03_13

DTL40N03_13

更新时间： 2024-11-28 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
8页	1736K
描述
N-Channel 30-V (D-S) MOSFET Halogen-free

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中文翻译

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数据手册

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DTL40N03_13 数据手册

DTL40N03

www.din-tek.jp

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

TrenchFET^®Power MOSFET

100 % R_gTested

RoHS

0.0057 at V_GS= 10 V

0.0076 at V_GS= 4.5 V

COMPLIANT

13.8 nC

• 100 % UIS Tested

APPLICATIONS

TO-251

•

Low-Side Switch

• Notebook DC/DC

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

Unit

40^a

_C= 25 °C

_C= 70 °C

40^a

Continuous Drain Current (T_J= 150 °C)

I_D

22.7^{b, c}

19.7^{b, c}

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

Avalanche Current

Avalanche Energy

I_DM

I_AS

E_AS

40^a

4.1^{b, c}

L = 0.1 mH

_C= 25 °C

_A= 25 °C

_C= 25 °C

_C= 70 °C

Continuous Source-Drain Diode Current

I_S

Maximum Power Dissipation

P_D

5^{b, c}

3.2^{b, c}

- 55 to 150

260

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t ≤ 10 s

Steady State

°C/W

2.0

2.5

Notes:

a. Based on T_C= 25 °C. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

12 3 4 5 6 7 8

中文翻译

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