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DTL2N60_13 PDF预览

DTL2N60_13

更新时间: 2024-11-28 12:52:03
品牌 Logo 应用领域
鼎日 - DINTEK /
页数 文件大小 规格书
11页 3668K
描述
Power MOSFET Available in Tape and Reel

DTL2N60_13 数据手册

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DTL2N60/DTP2N60/DTU2N60  
www.din-tek.jp  
Power MOSFET  
FEATURES  
Halogen-free According to IEC 61249-2-21  
Definition  
PRODUCT SUMMARY  
VDS (V)  
600  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• Available in Tape and Reel  
• Fast Switching  
• Ease of Paralleling  
• Compliant to RoHS Directive 2002/95/EC  
R
DS(on) (Ω)  
VGS = 10 V  
3.9  
Qg (Max.) (nC)  
Qgs (nC)  
18  
3.0  
Q
gd (nC)  
8.9  
Configuration  
Single  
D
DPAK  
(TO-252)  
IPAK  
(TO-251)  
D
D
G
S
G
S
D
G
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
600  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
20  
T
C = 25 °C  
2.0  
Continuous Drain Current  
VGS at 10 V  
ID  
TC = 100 °C  
1.3  
A
Pulsed Drain Currenta  
IDM  
8.0  
Linear Derating Factor  
0.33  
0.020  
74  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
EAS  
IAR  
mJ  
A
2.0  
Repetitive Avalanche Energya  
EAR  
4.2  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
T
C = 25 °C  
42  
PD  
W
V/ns  
°C  
TA = 25 °C  
2.5  
dV/dt  
3.0  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
260d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12).  
c. ISD 2.0 A, dI/dt 40 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
1

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