Datasheet > DTL1N60

DTL1N60

更新时间： 2024-11-28 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
12页	4091K
描述
Power MOSFET Available in Tape and Reel

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DTL1N60 数据手册

DTL1N60/DTP1N60/DTU1N60

www.din-tek.jp

Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

PRODUCT SUMMARY

V_DS(V)

600

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Available in Tape and Reel

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

Q_g(Max.) (nC)

Q_gs(nC)

2.7

_gd(nC)

8.1

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

TO-220AB

DPAK

IPAK

(TO-252)

(TO-251)

G D

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

1.4

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

0.89

Pulsed Drain Current^a

I_DM5.6

Linear Derating Factor

0.28

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

0.020

E_AS

I_AR

1.4

Repetitive Avalanche Energy^a

E_AR

3.6

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

3.8

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

260^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 37 mH, R_g= 25 Ω, I_AS= 1.4 A (see fig. 12).

c. I_SD≤1.4 A, dI/dt ≤ 40 A/μs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

12 3 4 5 6 7...12

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