Datasheet > DTE2312

DTE2312

更新时间： 2024-10-29 12:51:27

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
8页	358K
描述
N-Channel 20-V (D-S) MOSFET

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中文翻译

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DTE2312 数据手册

D5&

www.daysemi.jp

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

4.5

TrenchFET^®Power MOSFET

0.0236 at V_GS= 10 V

0.0263 at V_GS= 4.5 V

0.0361 at V_GS= 2.5 V

New Thermally Enhanced PowerPAK^®

SC-70 Package

RoHS

4.5

7.9 nC

COMPLIANT

- Small Footprint Area

- Low On-Resistance

4.5

•

100 % R_gTested

TO-226AA

(TO-92)

APPLICATIONS

Load Switch

•

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

4.5^a

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

4.5^a

Continuous Drain Current (T_J= 150 °C)^a

I_D

4.5^{a, b, c}

4.5^a

2.9^{b, c}

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

P_D

Maximum Power Dissipation

3.5^{b, c}

2.2^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

Steady State

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

°C/W

R_thJC

5.3

6.5

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

12 3 4 5 6 7 8

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