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DTE2311_13 PDF预览

DTE2311_13

更新时间: 2024-10-29 12:52:03
品牌 Logo 应用领域
鼎日 - DINTEK /
页数 文件大小 规格书
7页 1379K
描述
P-Channel 20-V (D-S) MOSFET Halogen-free

DTE2311_13 数据手册

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DTE2311  
www.din-tek.jp  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 4.2  
- 3.6  
0.045 at VGS = - 4.5 V  
0.072 at VGS = - 2.5 V  
- 20  
RoHS  
COMPLIANT  
S*  
TO-226AA  
(TO-92)  
1
S
G
G
D
2
3
D
P-Channel MOSFET  
Top View  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
- 20  
12  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
TA = 25 °C  
TA = 70 °C  
- 4.2  
- 3.9  
- 4.0  
- 3.2  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current (10 µs Pulse Width)  
- 20  
Continuous Source Current (Diode Conduction)a  
- 1.35  
1.5  
- 0.95  
1.05  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
1.0  
0.67  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
65  
Maximum  
Unit  
t 10 s  
83  
120  
52  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
100  
43  
°C/W  
RthJF  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
1

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