是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-70 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | Factory Lead Time: | 13 weeks |
风险等级: | 1.56 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 10 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 82 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e1 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
DTD113ZKT146 | ROHM |
完全替代 |
DTD113Z series | |
DTD113ZL-AE3-6-R | UTC |
功能相似 |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTD113ZV | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP | |
DTD113ZVTV2 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 | |
DTD113ZVTV3 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3 | |
DTD114E | UTC |
获取价格 |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) | |
DTD114E | ROHM |
获取价格 |
Digital transistors (built-in resistors) | |
DTD114E_11 | UTC |
获取价格 |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) | |
DTD114EA | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP | |
DTD114EA3 | CYSTEKEC |
获取价格 |
NPN Digital Transistors (Built-in Resistors) | |
DTD114EAC2 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATR, 3 | |
DTD114E-AE3-R | UTC |
获取价格 |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) |