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DTD113ZN3 PDF预览

DTD113ZN3

更新时间: 2024-09-28 03:00:27
品牌 Logo 应用领域
全宇昕 - CYSTEKEC 晶体数字晶体管
页数 文件大小 规格书
4页 154K
描述
NPN Digital Transistors (Built-in Resistors)

DTD113ZN3 数据手册

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Spec. No. : C379N3  
Issued Date : 2003.10.05  
Revised Date : 2004.02.26  
Page No. : 1/4  
CYStech Electronics Corp.  
NPN Digital Transistors (Built-in Resistors)  
DTD113ZN3  
Features  
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input  
resistors (see equivalent circuit).  
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the  
input. They also have the advantage of almost completely eliminating parasitic effects.  
Only the on/off conditions need to be set for operation, making device design easy.  
Complements the DTB113ZN3  
Equivalent Circuit  
Outline  
SOT-23  
DTD113ZN3  
R1=1k, R2=10 kΩ  
IN(B) : Base  
OUT(C) : Collector  
GND(E) : Emitter  
Absolute Maximum Ratings (Ta=25)  
Parameter  
Symbol  
Limits  
Unit  
Supply Voltage  
VCC  
VIN  
IO  
50  
-5~+10  
500  
V
V
Input Voltage  
Output Current  
mA  
mW  
°C  
Power Dissipation  
Junction Temperature  
Storage Temperature  
Pd  
200  
Tj  
Tstg  
150  
-55~+150  
°C  
DTD113ZN3  
CYStek Product Specification  

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