是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.58 | Is Samacsys: | N |
其他特性: | DIGITAL, BUILT IN BIAS RESISTOR RATIO 10 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 56 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e1 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.2 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子面层: | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
RN1426 | TOSHIBA |
功能相似 |
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BCR523 | INFINEON |
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NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTD113ZK_09 | ROHM |
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500mA / 50V Digital transistors | |
DTD113ZK_1 | ROHM |
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500mA / 50V Digital transistors (with built-in resistors) | |
DTD113ZKFRAT146 | ROHM |
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Small Signal Bipolar Transistor, | |
DTD113ZKT146 | ROHM |
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DTD113Z series | |
DTD113ZKT246 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
DTD113ZL | ETC |
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TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP | |
DTD113ZL-AE3-6-R | UTC |
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NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) | |
DTD113ZL-AE3-G-R | UTC |
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Transistor | |
DTD113ZL-AE3-R | UTC |
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NPN DIGITAL TRANSISTOR BUILT- IN BIAS RESISTORS) | |
DTD113ZL-AL3-6-R | UTC |
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NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) |