DTC507 PDF预览

DTC507

更新时间: 2025-07-18 19:54:47
品牌 Logo 应用领域
FS PC
页数 文件大小 规格书
3页 178K
描述
POLARITY : NPN; PC : 200; Io : 70; VCC : 50; TR1 R1 : 10; TR1 R2 : 47; Package : SOT-523;

DTC507 数据手册

 浏览型号DTC507的Datasheet PDF文件第2页浏览型号DTC507的Datasheet PDF文件第3页 
SEMICONDUCTOR  
DTC507  
TECHNICAL DATA  
Digital transistors (built-in resistors)  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
Applications  
3
Inverter, Interface, Driver  
Features  
2
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
SC-89  
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
3 OUT  
2 GND  
R1  
R2  
IN 1  
We declare that the material of product compliance with  
RoHS requirements.  
Absolute maximum ratings (Ta=25°C)  
OUT  
IN  
Parameter  
Symbol  
Unit  
Limits  
GND  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
CBO  
CEO  
EBO  
50  
V
V
50  
5
70  
V
I
C
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
200  
Tj  
Tstg  
150  
55 to +150  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
DTC507  
N14  
10  
47  
3000/Tape & Reel  
Electrical characteristics (Ta=25°C)  
Parameter  
Input voltage  
Symbol  
Min.  
Typ.  
Max.  
0.3  
Unit  
V
Conditions  
=100µA  
=1mA  
=5mA/0.25mA  
=5V  
CC=50V, V  
=5V, I =5mA  
VI(off)  
V
CC=5V, I  
=0.3V, I  
/I  
O
VI(on)  
1.4  
VO  
O
V
O(on)  
0.1  
0.3  
0.88  
0.5  
V
mA  
µA  
I
O I  
Output voltage  
Input current  
I
I
V
V
V
I
IO(off)  
I
=0V  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
G
I
68  
7
O
O
R1  
10  
4.7  
250  
13  
k  
R
2
/R1  
3.7  
5.7  
Transition frequency  
f
T
MHz  
V
CE=10V, I =5mA, f=100MHz  
E
Characteristics of built-in transistor  
2012.10. 30  
Revision No : 0  
1/3  

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CE结击穿电压Vceo(V):20V;类型:NPN - Pre-Biased;CE结饱和压