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DTC144EKA PDF预览

DTC144EKA

更新时间: 2024-11-28 22:15:59
品牌 Logo 应用领域
乐山 - LRC 晶体数字晶体管
页数 文件大小 规格书
2页 76K
描述
Digital transistors(built-in resistors)

DTC144EKA 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.34
Is Samacsys:N最大集电极电流 (IC):0.03 A
最小直流电流增益 (hFE):68元件数量:1
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

DTC144EKA 数据手册

 浏览型号DTC144EKA的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
Digital transistors (built-in resistors)  
• Features  
1) Built-in bias resistors enable the configuration of an inverter circuit without  
connecting external input resistors (see equivalent circuit).  
2) The bias resistors consist of thinfilm resistors with complete isolation to allow  
positive biasing of the input. They also have the advantage of almost completely  
eliminating parasitic effects.  
DTC144EKA  
3) Only the on/ off conditions need to be set for operation, making device design  
easy.  
• Structure  
PNP digital transistor (with built-in resistors)  
•Equivalent circuit  
+
2.9 0.2  
+
1.1 +- 0.2  
0.1  
1.9 0.2  
+
0.95 0.95  
+
0.8 0.1  
(2)  
(1)  
0 ~ 0.1  
R1  
OUT  
IN  
R2  
(3)  
(1) GND  
(2) IN  
GND  
OUT  
0.1  
0.06  
0.15 +-  
0.1  
0.05  
0.4 +  
-
(3) OUT  
IN  
All terminals have same dimensions  
GND  
EIAJ: SC— 59  
Absolute maximum ratings(Ta=25 °C)  
Parameter  
symbol  
limits  
unit  
Supply voltage  
Input voltage  
V
50  
–10~+40  
30  
V
V
cc  
V
IN  
I O  
I C(Max.)  
Pd  
Output current  
mA  
100  
Power dissipation  
150  
200  
150  
300  
mW  
°C  
Junction temperature  
Storage temperature  
T j  
T stg  
–55~+150  
°C  
Elecrical characteristics(Ta=25°C)  
Parameter  
symbol  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
V
3
47  
1
0.5  
VCC= 5V,IO= 100µA  
VO= 0.3V,IO=2mA  
IO/II=10mA/0.5mA  
VI= 5V  
I(off)  
Input voltage  
V I(on)  
V O(on)  
I I  
Output Voltage  
0.3  
0.18  
0.5  
V
mA  
µA  
Input current  
Output current  
I O(off)  
G I  
VCC= 50V,VI= 0 V  
VO= 5V,IO= 5mA  
DC current gain  
68  
32.9  
0.8  
Input resistance  
R 1  
61.1  
1.2  
K  
Resistance ratio  
R 2 / R 1  
Transition frequency  
*Transition frequency of the device  
f
250  
MHz  
VCE= 10V,IE= – 5 mA,f=100MHz*  
T
P15–1/2  

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