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DTC143EU3 PDF预览

DTC143EU3

更新时间: 2023-06-19 15:17:36
品牌 Logo 应用领域
罗姆 - ROHM 小信号双极晶体管
页数 文件大小 规格书
3页 60K
描述
本产品是电阻内置型晶体管。由于内置了偏压用电阻,因此输入侧无需外接电阻即可构成逆变电路。

DTC143EU3 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.56
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC143EU3 数据手册

 浏览型号DTC143EU3的Datasheet PDF文件第2页浏览型号DTC143EU3的Datasheet PDF文件第3页 
Transistors  
! DTC143EEB  
! ! ! ! ! ! ! ! ! ! ! ! ! !  
100mA / 50V Digital transistors  
(with built-in resistors)  
DTC143EEB  
zApplications  
zDimensions (Unit : mm)  
Inverter, Interface, Driver  
EMT3F  
1.6  
0.7  
zFeatures  
0.26  
(3)  
1) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see equivalent circuit).  
2) The bias resistors consist of thin-film resistors  
with complete isolation to allow negative biasing  
of the input. They also have the advantage of  
almost completely eliminating parasitic effects.  
3) Only the on/off conditions need to be set for  
operation, making the device design easy.  
(1)  
0.5 0.5  
1.0  
(2)  
0.13  
Each lead has same dimensions  
(1) IN  
(2) GND  
(3) OUT  
Abbreviated symbol : 23  
zStructure  
zEquivalent circuit  
NPN silicon epitaxial planar transistor type  
(Resistor built-in)  
OUT  
R1  
IN  
R2  
zPackaging specifications  
GND  
OUT  
Package  
EMT3F  
Taping  
TL  
Packaging type  
Code  
IN  
Part No.  
Basic ordering unit (pieces)  
3000  
GND  
DTC143EEB  
R1=R2=4.7kΩ  
zAbsolute maximum ratings (Ta=25qC)  
Parameter  
Symbol  
Limits  
Unit  
Supply voltage  
Input voltage  
V
CC  
50  
V
V
V
IN  
10 to +30  
Collector current  
Output current  
Ic(max) 1  
100  
100  
mA  
mA  
mW  
°C  
2  
Io  
Power dissipation  
Junction temperature  
P
D
150  
Tj  
150  
Range of storage temperature  
Tstg  
55 to +150  
°C  
1 Characteristics of built-in transistor  
2 Each terminal mounted on a recommended land  
1/2  

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