Datasheet > DTC143ESA-C

DTC143ESA-C

更新时间： 2024-01-20 14:45:24

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描述
NPN Digital Transistors ( Built-in Resistors)

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中文翻译

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技术参数
数据手册

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DTC143ESA-C 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.56	Base Number Matches：	1

DTC143ESA-C 数据手册

DTC143EM/DTC143EE/DTC143EUA

DTC143ECA/DTC143ESA

NPN Digital Transistors (Built-in Resistors)

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

DTC143EM (SOT-723)

DTC143EE (SOT-523)

ꢀ

Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

ꢀ

The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the

input. They also have the advantage of almost

completely eliminating parasitic effects.

ꢀ

Only the on/off conditions need to be set for

operation, making device design easy.

MARKING：23

DTC143EUA (SOT-323)

DTC143ECA (SOT-23)

EQUIVALENT CIRCUIT

ORDER INFORMATION

MARKING：23

Part Number

Type

DTC143ESA (TO-92S)

DTC143EM

DTC143EE

DTC143EUA

DTC143ECA

DTC143ESA

DTC143EM-C

DTC143EE-C

DTC143EUA-C

DTC143ECA-C

DTC143ESA-C

Lead (Pb)-free

MARKING：

C143

E ꢁꢁꢁ

Lead (Pb)-free and Halogen-free

Date Code

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise noted)

Limits (DTC143E□)

Parameter

Symbol

Unit

Supply Voltage

V_CC

V_IN

Input Voltage

-10~30

100

Output Current

I_O

°C

Power Dissipation

Junction & Storage Temperature

P_D

100

150

200

300

T_J, T_STG

-55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Min.

Typ.

Max.

0.5

Unit

Test Conditions

V_CC=5V, I_O=100µA

Input Voltage

V_O=0.3V, I_O=20mA

I_O/I_I=10mA/0.5mA

V_I=5V

Output Voltage

Input Current

0.3

1.8

0.5

µA

Output Current

I_O(off)

G_I

V_CC=50V, V_I=0

V_O=5V, I_O=10mA

DC Current Gain

Input Resistance

Resistance Ratio

Transition Frequency

http://www.SeCoSGmbH.com/

24-Jan-2018 Rev. C

3.29

0.8

R₁

4.7

6.11

1.2

KΩ

R₂/R₁

f_T

250

MHz

V_O=10V, I_O=5mA, f=100MHz

Any changes of specification will not be informed individually.

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