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DTC125TSA

更新时间： 2024-09-20 22:18:55
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
1页 58K
描述
Digital transistor (built-in resistor)

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中文翻译

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DTC125TSA 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5.84最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：100元件数量：1
极性/信道类型：NPN最大功率耗散 (Abs)：0.3 W
子类别：BIP General Purpose Small Signal表面贴装：NO
晶体管元件材料：SILICON

DTC125TSA 数据手册

  
DTC125TUA / DTC125TKA / DTC125TSA  
Transistors  
Digital transistor (built-in resistor)  
DTC125TUA / DTC125TKA / DTC125TSA  
!Features  
!External dimensions (Units : mm)  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors.  
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the  
input, and parasitic effects are almost completely  
eliminated.  
DTC125TUA  
1.25  
2.1  
0.1to0.4  
Each lead has same dimensions  
(
)
)
(1) Emitter Source  
ROHM : UMT3  
EIAJ : SC-70  
3) Only the on / off conditions need to be set for  
operation, making device design easy.  
4) Higher mounting densities can be achieved.  
(
)
(2) Base Gate  
(3) Collector Drain  
(
DTC125TKA  
!Absolute maximum ratings (Ta = 25°C)  
1.6  
Parameter  
Symbol  
Limits  
Unit  
V
2.8  
Collector-base voltage  
VCBO  
VCEO  
VEBO  
50  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
50  
V
5
V
0.3to0.6  
I
C
100  
mA  
Each lead has same dimensions  
DTC125TUA / DTC125TKA  
200  
Collector power  
dissipation  
Pc  
mW  
(1) Emitter(Source)  
(2) Base(Gate)  
(3) Collector(Drain)  
DTC125TSA  
300  
ROHM : SMT3  
EIAJ : SC-59  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
−
55 ∼ +150  
DTC125TSA  
4
2
!Package, marking, and packaging specifications  
Part No.  
DTC125TUA  
UMT3  
0A  
DTC125TKA  
SMT3  
0A  
DTC125TSA  
0.45  
Package  
Marking  
SPT  
−
TP  
0.45  
2.5 0.5  
Packaging code  
Basic ordering unit (pieces)  
T106  
T146  
5
2
3000  
3000  
5000  
( )  
1
(
)
(
)
3
Taping specifications  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : SPT  
EIAJ : SC-72  
!Electrical characteristics (Ta = 25°C)  
!Circuit schematic  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
C
E
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
−
−
−
−
−
−
−
−
V
V
I
I
I
C
C
E
=
=
=
50µA  
1mA  
50  
50  
5
B
R1  
V
50µA  
I
CBO  
EBO  
CE(sat)  
FE  
−
−
−
100  
140  
−
µA  
µA  
V
V
CB  
EB  
=
=
50V  
4V  
0.5  
0.5  
0.3  
600  
260  
−
Emitter cutoff current  
I
V
E : Emitter  
C : Collector  
B : Base  
Collector-emitter saturation voltage  
DC current transfer ratio  
V
−
I
I
C
=
=
0.5mA , I  
B
=
=
0.05mA  
h
250  
200  
250  
−
kΩ  
MHz  
C
1mA , VCE  
5V  
Input resistance  
R1  
−
∗
Transition frequency  
f
T
V
CE = 10V , IE = -5mA , f = 100MHz  
∗
Transition frequency of the device.  
1

中文翻译

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