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DTC123JET1G PDF预览

DTC123JET1G

更新时间： 2024-11-26 22:14:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
10页 106K
描述
Bias Resistor Transistor

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中文翻译

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DTC123JET1G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：SC-75包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：8 weeks
风险等级：0.95Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 0.047最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：0.3 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DTC123JET1G 数据手册

 浏览型号DTC123JET1G的Datasheet PDF文件第2页浏览型号DTC123JET1G的Datasheet PDF文件第3页浏览型号DTC123JET1G的Datasheet PDF文件第4页浏览型号DTC123JET1G的Datasheet PDF文件第5页浏览型号DTC123JET1G的Datasheet PDF文件第6页浏览型号DTC123JET1G的Datasheet PDF文件第7页 
DTC114EET1 Series  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base−emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the  
SC−75/SOT−416 package which is designed for low power surface  
mount applications.  
http://onsemi.com  
NPN SILICON  
BIAS RESISTOR TRANSISTORS  
PIN 3  
COLLECTOR  
(OUTPUT)  
Features  
PIN 1  
R1  
• Simplifies Circuit Design  
• Reduces Board Space  
BASE  
(INPUT)  
R2  
• Reduces Component Count  
PIN 2  
• The SC−75/SOT−416 Package Can be Soldered Using Wave or  
Reflow  
EMITTER  
(GROUND)  
• The Modified Gull−Winged Leads Absorb Thermal Stress During  
Soldering Eliminating the Possibility of Damage to the Die  
• Available in 8 mm, 7 inch/3000 Unit Tape & Reel  
MARKING  
DIAGRAM  
• Pb−Free Packages are Available  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
SC−75/SOT−416  
CASE 463  
STYLE 1  
xx  
M
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
2
V
CBO  
V
CEO  
1
Collector-Emitter Voltage  
Collector Current  
50  
Vdc  
I
C
100  
mAdc  
xx = Specific Device Code  
M = Date Code  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
THERMAL CHARACTERISTICS  
the package dimensions section on page 2 of this data sheet.  
Rating  
Symbol  
Value  
Unit  
Total Device Dissipation,  
P
D
FR−4 Board (Note 1) @ T = 25°C  
Derate above 25°C  
200  
1.6  
mW  
mW/°C  
A
Thermal Resistance,  
R
600  
°C/W  
q
JA  
Junction−to−Ambient (Note 1)  
Total Device Dissipation,  
P
D
FR−4 Board (Note 2) @ T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
Thermal Resistance,  
Junction−to−Ambient (Note 2)  
R
400  
°C/W  
°C  
q
JA  
Junction and Storage Temperature Range  
T , T  
J
−55 to  
+150  
stg  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 × 1.0 Inch Pad  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 6  
DTC114EET1/D  
1234567...10

中文翻译

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DTC123JET1G 替代型号

型号 品牌 替代类型 描述 数据表
DTC123JET1 ONSEMI

类似代替

 NPN SILICON BIAS RESISTOR TRANSISTORS
PDTC123JE,115 NXP

功能相似

 PDTC123J series - NPN resistor-equipped trans
PDTC123EE,115 NXP

功能相似

 PDTC123E series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm SC-75 3-

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