Datasheet > DTC115TE

DTC115TE

更新时间： 2024-02-25 19:07:22

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
11页	134K
描述
Digital Transistors (BRT)

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中文翻译

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技术参数
数据手册

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DTC115TE 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.33	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	100	JESD-609代码：	e1
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.15 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
晶体管元件材料：	SILICON

DTC115TE 数据手册

MUN2241, MMUN2241L,

MUN5241, DTC115TE,

DTC115TM3, NSBC115TF3

Digital Transistors (BRT)

R1 = 100 kW, R2 = 8 kW

www.onsemi.com

NPN Transistors with Monolithic Bias

Resistor Network

PIN CONNECTIONS

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

SC−59

CASE 318D

STYLE 1

XX MG

SOT−23

CASE 318

STYLE 6

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

XXX MG

Compliant

MAXIMUM RATINGS (T = 25°C)

Rating

Symbol

Max

Unit

SC−70/SOT−323

CASE 419

XX MG

Collector−Base Voltage

Vdc

CBO

CEO

STYLE 3

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

100

Vdc

mAdc

Vdc

SC−75

CASE 463

STYLE 1

XX M

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

SOT−723

CASE 631AA

STYLE 1

SOT−1123

CASE 524AA

STYLE 1

X M

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

November, 2016 − Rev. 2

DTC115T/D

12 3 4 5 6 7...11

中文翻译

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与DTC115TE相关器件

型号	品牌	获取价格	描述	数据表
DTC115TE_09	ROHM	获取价格	100mA / 50V Digital transistors (with built-in resistors)
DTC115TET1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 100 k R2 = k
DTC115TETL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
DTC115TETR	ROHM	获取价格	暂无描述
DTC115TF	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-71
DTC115TFA	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-71
DTC115TFAC1	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3
DTC115TG-AE3-R	UTC	获取价格	NPN DIGITAL TRANSISTOR
DTC115TH	ROHM	获取价格	Digital transistors (built in resistor)
DTC115THT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-89,

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