Datasheet > DTC114TUA_11

DTC114TUA_11

更新时间： 2024-09-24 09:58:15

品牌	Logo	应用领域
美微科 - MCC		晶体数字晶体管
页数	文件大小	规格书
3页	206K
描述
NPN Digital Transistor

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中文翻译

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数据手册

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DTC114TUA_11 数据手册

M C C

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20736 Marilla Street Chatsworth

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$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

DTC114TUA

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

NPN Digital Transistor

xꢀ Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

xꢀ The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

xꢀ Only the on/off conditions need to be set for operation, making

device design easy

SOT-323

Absolute Maximum Ratings

Parameter

Collector-Base Voltage

1: Base

2: Emitter

3: Collector

Symbol

V_CBO

Value

Unit

Collector-Emitter Voltage

Emitter-Base voltage

V_CEO

V_EBO

Collector Current-Continuous

I_C

100

Collector Dissipation

P_C

200

Junction Temperature

T_J

150

Storage Temperature Range

T_STG

-55~150

DIMENSIONS

Electrical Characteristics

INCHES

MAX

Sym

Parameter

Collector-Base Breakdown Voltage

(I_C=50uA, I_E=0)

Min

Typ

Max Unit

DIM

MIN

.071

.045

.079

MIN

1.80

1.15

2.00

MAX

2.20

1.35

2.20

NOTE

.087

.053

.087

V_(BR)CBO

---

Collector-Emitter Breakdown Voltage

(I_C=1mA, I_B=0)

.026 Nominal

0.65Nominal

1.20

V_(BR)CEO

V_(BR)EBO

I_CBO

---

.047

.012

.000

.035

.004

.012

.055

.016

.004

.039

.010

.016

1.40

.40

.100

1.00

.250

.40

Emitter-Base Breakdown Voltage

(I_E=50uA, I_C=0)

.30

.000

.90

.100

.30

---

Collector Cut-off Current

(V_CB=50V, I_E=0)

---

0.5

Emitter Cut-off Current

(V_EB=4V, I_C=0)

I_EBO

---

0.5

---

Suggested Solder

Pad Layout

0.70

DC Current Gain

(V_CE=5V, I_C=1mA)

h_FE

100

300

600

Collector-Emitter Saturation Voltage

(I_C=10mA, I_B=1mA)

V_CE(sat)

R₁

---

0.3

---

0.90

Input Resistor

K¡

MHz

Transition Frequency

(V_CE=10V, I_C=-5mA, f=100MHz)

f_T

---

250

1.90

*Marking: 04

0.65

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

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与DTC114TUA_11相关器件

型号	品牌	获取价格	描述	数据表
DTC114TUAP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323
DTC114TUA-SOT-323	CJ	获取价格	TRANSISTOR (NPN)
DTC114TUAT106	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
DTC114TUA-TP	MCC	获取价格	NPN Digital Transistor
DTC114TUA-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
DTC114TUB	ROHM	获取价格	100mA / 50V Digital transistors
DTC114TUS3	ETC	获取价格	Mini size of Discrete semiconductor elements
DTC114TV	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SIP
DTC114TVA	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SIP
DTC114TVATV4	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3

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