DTC114EEB

更新时间： 2024-11-12 09:58:15

品牌	Logo	应用领域
罗姆 - ROHM		晶体数字晶体管
页数	文件大小	规格书
3页	78K
描述
100mA / 50V Digital transistors

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DTC114EEB 数据手册

Transistors

DTC114EEB

100mA / 50V Digital transistors

(with built-in resistors)

DTC114EEB

zApplications

zDimensions (Unit : mm)

Inverter, Interface, Driver

EMT3F

1.6

0.7

zFeatures

0.26

(3)

1) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for

operation, making the device design easy.

(1)

0.5 0.5

1.0

(2)

0.13

(1) IN

(2) GND

(3) OUT

Each lead has same dimensions

Abbreviated symbol : 24

zStructure

zEquivalent circuit

NPN silicon epitaxial planar transistor type

(Resistor built-in)

OUT

GND

zPackaging specifications

Package

EMT3F

Taping

Packaging type

Code

OUT

Part No.

Basic ordering unit (pieces)

3000

GND

DTC114EEB

R1=R

=10kΩ

zAbsolute maximum ratings (Ta=25°C)

Parameter

Supply voltage

Symbol

Limits

Unit

Input voltage

−10 to +40

Collector current

Ic(max) ^∗1

100

°C

∗2

Output current

Power dissipation

150

Junction temperature

Range of storage temperature

Tstg

150

−55 to +150

°C

∗1 Characteristics of built-in transistor

∗2 Each terminal mounted on a recommended land

1/2

12 3

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