Datasheet > DTC114EE_08

DTC114EE_08

更新时间： 2024-02-11 08:32:03

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
13页	421K
描述
Bias Resistor Transistor NPN Silicon

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数据手册

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DTC114EE_08 数据手册

DTC114EE Series

Bias Resistor Transistor NPN Silicon

P b

Lead(Pb)-Free

COLLECTOR

BASE

SC-89

(SOT-523F)

EMITTER

Maximum Ratings (TA=25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

CEO

CBO

Collector-Base Voltage

100

Collector Current-Continuous

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

FR-4 Board⁽¹⁾T =25˚C

200

1.6

mW/ ˚C

Derate above 25˚C

Thermal Resistance, Junction to Ambient⁽¹⁾

600

˚C/W

θJA

Total Device Dissipation FR-5 Board

FR-4 Board⁽²⁾T =25˚C

300

2.4

mW/ ˚C

Derate above 25˚C

Thermal Resistance, Junction to Ambient⁽²⁾

400

˚C/W

˚C

θJA

Junction Temperature Range

-55 to +150

Storage Temperature Range

Tstg

˚C

1.FR-4 @ Minimum pad

2.FR-4 @1.0 x 1.0 Inch pad

Device Marking and ResistorValues

Device

Marking

R1(K)

R2(K)

Device

Marking

R1(K)

R2(K)

DTC114EE

DTC123EE

2.2

4.7

DTC143EE

DTC143ZE

DTC124XE

DTC123JE

DTC115EE

DTC144WE

4.7

2.2

100

DTC124EE

DTC144EE

DTC114YE

DTC114TE

DTC143TE

4.7

100

WEITRON

http://www.weitron.com.tw

1/13

Rev.A 29-Jul-08

12 3 4 5 6 7...13

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