Datasheet > DTC114EE

DTC114EE

更新时间： 2024-05-23 22:21:13

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
6页	149K
描述
SOT-523

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技术参数
数据手册

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DTC114EE 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	50
IC (mA)：	50	Transition frequency：	250+
R1(KΩ）：	10K	R2(KΩ）：	10K
R1/R2_TYPE：	1.00	Pd（mW）：	150
class：	Transistors

DTC114EE 数据手册

TAK CHEON

^®

SEMICONDUCTOR

SOT-523 Bias Resistor Transistor

NPN Silicon Surface Mount Transistor with

Monolithic Bias Resistor Network

Green Product

This new series of digital transistors is designed to replace a single device and

its external resistor bias network. The BRT (Bias Resistor Transistor) contains a

single transistor with a monolithic bias network consisting of two resistors: a

series base resistor and a base-emitter resistor. The BRT eliminates these

individual components by integrating them into a single device. The device is

designed for low power surface mount applications.

Absolute Maximum Ratings (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

V_CEO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

100

°C /W

°C

SOT-523 (SC-75A)

P_D

Power Dissipation

150

Thermal Resistance from Junction to Ambient

Junction & Storage Temperature Range

600

R_θJA

T_JT_STG

-55 to +150

These ratings are limiting values above which the serviceability of the device may be impaired.

Specification Features:

Electrical Symbol:

§ Simplifies Circuit Design

§ Reduces Board Space

§ Reduces Component Count

§ RoHS Compliant

§ Green EMC

§ Matte Tin(Sn) Lead Finish

§ Weight: approx. 0.002g

DB Number: DB-250

Aug. 2014, Revision A

Page 1

12 3 4 5 6

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