5秒后页面跳转
DTC114EE PDF预览

DTC114EE

更新时间: 2024-02-02 19:59:22
品牌 Logo 应用领域
TSC 晶体信号二极管晶体管
页数 文件大小 规格书
3页 434K
描述
NPN Small Signal Transistor Small Signal Diode

DTC114EE 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC):0.07 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):68
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC114EE 数据手册

 浏览型号DTC114EE的Datasheet PDF文件第2页浏览型号DTC114EE的Datasheet PDF文件第3页 
DTC114 EM/EE/EUA/ECA/ESA  
NPN Small Signal Transistor  
Small Signal Diode  
Features  
—Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistor  
(see equivalent circuit).  
—The bias resistors consist of thin -film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
—Only the on/off conditions need to be set for  
operation,marking device design easy.  
— Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code.  
Ordering Information  
Part No.  
DTC114 EM  
DTC114 EE  
DTC114 EUA  
DTC114 ECA  
DTC114 ESA  
Packing  
Package  
SOT-723  
SOT-523  
SOT-323  
SOT-23  
8K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
TO-92S  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Value  
EUA ECA  
200  
50  
Type Number  
Power Dissipation  
Symbol  
Units  
EM  
ESA  
300  
EE  
150  
PD  
VCC  
VIN  
100  
mW  
V
Supply Voltage  
Input Voltage  
-1040  
50  
V
IO  
Output Current  
mA  
IC(MAX)  
100  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Parameter  
Symbol Min Typ  
Max  
Condtion  
Unit  
VCC=5V,IO=100μA  
VO=0.3V,IO=10mA  
IO/II=10mA/5mA  
VI(on)  
3
Input Voltage  
VI(off)  
0.5  
V
V
Output Voltage  
VO(on)  
0.3  
VI=5V  
Input Current  
II  
0.88  
mA  
VCC=50V,VI=0  
Output Current  
IOoff)  
0.5  
μA  
VO=5V,IO=5mA  
DC Current Gain  
Input Resistance  
GI  
30  
7
R1  
10  
1
13  
KΩ  
Resistance Ratio  
R2/R1  
fT  
0.8  
1.2  
VO=10V,IO=5mA,f=100MHz  
Transition Frequency  
250  
MHz  
Version:A12  

与DTC114EE相关器件

型号 品牌 获取价格 描述 数据表
DTC114EE_08 WEITRON

获取价格

Bias Resistor Transistor NPN Silicon
DTC114EE_09 ROHM

获取价格

100mA / 50V Digital transistors (with built-in resistors)
DTC114EE3 ROHM

获取价格

DTC114EE3 is a digital transistor suitable for inverter, interface and driver applications
DTC114EE3 (新产品) ROHM

获取价格

DTC114EE3 is a digital transistor suitable for inverter, interface and driver applications
DTC114EE3HZG (新产品) ROHM

获取价格

DTC114EE3HZG是一款车规级高可靠性数字晶体管。
DTC114EEB ROHM

获取价格

100mA / 50V Digital transistors
DTC114EEBTL ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS CO
DTC114EEFRA ROHM

获取价格

车载数字晶体管
DTC114EE-M0RSG TSC

获取价格

NPN Small Signal Transistor
DTC114EERS TSC

获取价格

NPN Small Signal Transistor