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DTC114EE PDF预览

DTC114EE

更新时间: 2024-11-26 06:54:51
品牌 Logo 应用领域
SECOS 晶体数字晶体管
页数 文件大小 规格书
2页 507K
描述
Digital Transistors NPN (Built-in Resistors)

DTC114EE 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliant风险等级:5.12
Is Samacsys:N其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DTC114EE 数据手册

 浏览型号DTC114EE的Datasheet PDF文件第2页 
DTC114EE/DTC114EUA/DTC114EKA  
/DTC114ESA/DTC114ECA  
Elektronische Bauelemente  
Digital Transistors NPN (Built-in Resistors)  
FEATURES  
* Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see equivalent circuit).  
* Only the on/off confitions need to be set for operation  
making device design easy.  
* The bias resistors consis of thin-filmresistors with  
compete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
External dimensions (Units:mm )  
SOT-323  
SOT-523  
SOT-23-3L  
SOT-23  
TO-92S  
Absolute maximum ratings(Ta=25)  
Limits (DTC114E)  
Parameter  
Symbol  
Unit  
E
UA  
CA  
50  
KA  
SA  
Supply voltage  
Input voltage  
VCC  
VIN  
V
V
-10~40  
50  
IO  
Output current  
mA  
IC(MAX)  
Pd  
100  
Power dissipation  
Junction temperature  
Storage temperature  
150  
200  
300  
mW  
Tj  
150  
Tstg  
-55~150  
Any changing of specification will not be informed individual  
http://www.SeCoSGmbH.com  
01-Jun-2002 Rev. A  
Page 1 of 2  

DTC114EE 替代型号

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