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DTC114ECA-TP PDF预览

DTC114ECA-TP

更新时间: 2024-11-26 09:58:15
品牌 Logo 应用领域
美微科 - MCC 晶体数字晶体管
页数 文件大小 规格书
3页 90K
描述
NPN Digital Transistors

DTC114ECA-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.56
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

DTC114ECA-TP 数据手册

 浏览型号DTC114ECA-TP的Datasheet PDF文件第2页浏览型号DTC114ECA-TP的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DTC114ECA  
Micro Commercial Components  
Features  
Case Material: Molded Plastic. UL Flammability  
NPN  
Classification Rating 94V-0 and MSL Rating 1  
Built-in bias resistors enable the configuration of an inverter circuit  
Digital Transistors  
without connecting external input resistors  
The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects.  
Only the on/off conditions need to be set for operation, making  
device design easy  
SOT-23  
A
D
Absolute maximum ratings @ 25R  
Symbol  
Parameter  
Supply voltage  
Input voltage  
Min  
---  
-10  
---  
---  
---  
Typ  
50  
---  
50  
200  
150  
Max  
---  
40  
100  
---  
---  
Unit  
V
V
3
VCC  
VIN  
IO  
Pd  
Tj  
1. IN  
2. GND  
3. OUT  
B
C
1
2
Output current  
mA  
mW  
?
Power dissipation  
Junction temperature  
Storage temperature  
F
E
Tstg  
-55  
---  
150  
?
Electrical Characteristics @ 25R  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
IO(off)  
GI  
R1  
Parameter  
Input voltage (VCC=5V, IO=100IA)  
(VO=0.3V, IO=10mA)  
Min  
---  
3.0  
---  
---  
---  
30  
7.0  
0.8  
Typ  
---  
---  
0.1  
---  
---  
---  
10  
1.0  
Max  
0.5  
---  
0.3  
0.88  
0.5  
---  
Unit  
V
V
G
H
J
K
Output voltage (IO/II=10mA/0.5mA)  
Input current (VI=5V)  
V
DIMENSIONS  
MM  
mA  
IA  
K=  
Output current (VCC=50V, VI=0)  
DC current gain (VO=5V, IO=5mA)  
Input resistance  
Resistance ratio  
Transition frequency  
(VCE=10V, IE=5mA, f=100MHz)  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
13  
1.2  
R2/R1  
fT  
---  
250  
---  
MHz  
F
G
H
J
.100  
1.12  
.180  
.51  
MARKING: 24  
.085  
.37  
K
Suggested Solder  
Pad Layout  
.031  
.800  
.035  
.900  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: 2  
2008/01/01  

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