Datasheet > DTC024EM

DTC024EM

更新时间： 2024-11-26 12:50:15

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
3页	291K
描述
100mA/50V Digital transistors(with built-in resistors)

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DTC024EM 数据手册

100mA/50V Digital transistors(with built-in resistors)

DTC024EM / DTC024EEB / DTC024EUB

Features

 Dimensions (Unit : mm)

1) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external input resistors.

(See equivalent circuit)

VMT3

2) The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

Abbreviated symbol : 48

EMT3F

3) Only the on/off conditions need to be set for operation,

making the device design easy.

(3)

(1)

(2)

Structure

NPN epitaxial planar silicon transistor

(Resistor built-in type)

Abbreviated symbol : 48

2.0

UMT3F

0.9

0.32

(3)

Applications

Inverter, Interface, Driver

(1)

(2)

0.13

0.65 0.65

1.3

Abbreviated symbol : 48

Packaging specifications

 Equivalent circuit

Package

VMT3

Taping

T2L

EMT3F

Taping

UMT3F

Taping

OUT

GND

Packaging Type

Code

Type

Basic ordering

unit (pieces)

8000

3000

DTC024EM

DTC024EEB

DTC024EUB

○

OUT

GND

○

R₁=R₂=22k

Absolute maximum (Ta=25C)

Limits(DTC024E□)

Parameter

Symbol

V_CC

Unit

Supply voltage

Input voltage

V_IN

-10

100

I_C(max)

I_O

Collector current *1

C

Output current

P_D

Power dissipation *2

150

200

Junction temperature

150

Range of storage temperature

*1ꢀCharacteristics of built-in transistor

*2 Each terminal mounted on a reference land

Tstg

-55 to +150

www.rohm.com

2011.08 - Rev.A

1/2

12 3

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