Datasheet > DTB6035

DTB6035

更新时间： 2024-09-25 12:24:27

品牌	Logo	应用领域
鼎日 - DINTEK		开关
页数	文件大小	规格书
6页	235K
描述
N-Channel Reduced Qg, Fast Switching MOSFET

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DTB6035 数据手册

DT#

www.daysemi.jp

N-Channel Reduced Q , Fast Switching MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

TrenchFET^®Power MOSFETs

V_DS(V)

_DS(on)(Ω)

I_D(A)

8.5

0.022 at V_GS= 10 V

0.031 at V_GS= 4.5 V

•

7.2

175 °C Maximum Junction Temperature

Compliant to RoHS Directive 2002/95/EC

SOT-223

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

8.5

7.1

6.0

5.0

Continuous Drain Current (T_J= 175 °C)^a

I_D

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

E_AS

Single Pulse Avalanche Energy

T_A= 25 °C

T_A= 70 °C

3.3

2.3

1.7

1.2

Maximum Power Dissipation^a

P_D

T_J, T_stg

- 55 to 175

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient ^a

Maximum Junction-to-Foot (Drain)

R_thJA

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

12 3 4 5 6

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