DTB543ZE

更新时间： 2024-09-24 03:30:43

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
2页	59K
描述
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)

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DTB543ZE 数据手册

DTB543ZE / DTB543ZM

Transistors

-500mA / -12V Low VCE (sat) Digital transistors

(with built-in resistors)

DTB543ZE / DTB543ZM

zApplications

zExternal dimensions (Unit : mm)

Inverter, Interface, Driver

DTB543ZE

0.7

1.6

0.3

0.55

zFeature

( )

1) V^CE(sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5 0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

Each lead has same dimensions

3) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the

input. They also have the advantage of almost

completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for

operation, making the device design easy.

zStructure

Abbreviated symbol : Y13

DTB543ZM

1.2

0.32

(3)

( )( )

1 2

0.22

(1) IN

(2) GND

(3) OUT

0.13

0.4 0.4

0.5

0.8

VMT3

PNP epitaxial plannar silicon transistor

(Resistor built-in type)

Each lead has same dimensions

Abbreviated symbol : Y13

zAbsolute maximum ratings (Ta=25°C)

zPackaging specifications

Package

EMT3

VMT3

Taping

T2L

Limits

Packaging type

Code

Taping

Parameter

Supply voltage

Symbol

Unit

DTB543ZE DTB543ZM

C (max)

−12

−12 to +5

−500

Basic ordering

unit (pieces)

3000

8000

Input voltage

Part No.

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

DTB543ZE

DTB543ZM

−

150

−

Tstg

150

−55 to +150

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

zEquivalent circuit

Parameter

Symbol Min.

Typ. Max. Unit

Conditions

=−100µA

=−20mA

=−100mA / −5mA

= −5V

CC=−12V, V

=−2V, I =−100mA

CE=−10V

I(off)

−

−2.5

−

−0.3

−

CC=−5V, I

Input voltage

OUT

I(on)

=−0.3V, I

Output voltage

Input current

O(on)

−60

−

−300

−1.4

−0.5

−

µA

−

GND(+)

OUT

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

O(off)

−

I=0V

140

−

∗

260

4.7

−

MHz

kΩ

−

=5mA, f=100MHz

GND(+)

3.29

8.0

6.11

−

2/R1

=4.7kΩ / R =47kΩ

∗ Characteristics of built-in transistor.

1/1

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与DTB543ZE相关器件

型号	品牌	获取价格	描述	数据表
DTB543ZE3	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTB543ZE3 (新产品)	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTB543ZETL	ROHM	获取价格	暂无描述
DTB543ZM	ROHM	获取价格	-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
DTB543ZMT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
DTB6035	DINTEK	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET
DTB6035_13	DINTEK	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET
DTB713ZE	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB713ZE_09	ROHM	获取价格	-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
DTB713ZET2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, PNP, Silicon

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