DTB543EM

更新时间： 2024-09-24 03:30:43

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
2页	58K
描述
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)

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DTB543EM 数据手册

DTB543EE / DTB543EM

Transistors

-500mA / -12V Low VCE (sat) Digital transistors

(with built-in resistors)

DTB543EE / DTB543EM

zApplications

zExternal dimensions (Unit : mm)

Inverter, Interface, Driver

DTB543EE

0.7

1.6

0.3

0.55

zFeature

( )

1) V^CE(sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5 0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

Each lead has same dimensions

3) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the

input. They also have the advantage of almost

completely eliminating parasitic effects.

Abbreviated symbol : X13

DTB543EM

1.2

0.32

(3)

4) Only the on / off conditions need to be set for

operation, making the device design easy.

(

)( )

0.22

(1) IN

(2) GND

(3) OUT

0.13

0.4 0.4

0.5

0.8

VMT3

zStructure

Each lead has same dimensions

Abbreviated symbol : X13

PNP epitaxial plannar silicon transistor

(Resistor built-in type)

zAbsolute maximum ratings (Ta=25°C)

zPackaging specifications

Package

EMT3

Taping

VMT3

Taping

T2L

Limits

Parameter

Symbol

Unit

Packaging type

Code

DTB543EE DTB543EM

Supply voltage

C (max)

−12

−12 to +10

−500

Basic ordering

unit (pieces)

Input voltage

3000

8000

Part No.

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

DTB543EE

DTB543EM

−

150

−

Tstg

150

−55 to +150

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

zEquivalent circuit

Parameter

Symbol Min.

Typ. Max. Unit

Conditions

V^I(off)

VI(on)

VO(on)

−

−2.5

−

−0.5

−

V^CC=−5V, IO=−100µA

V^O=−0.3V, IO=−20mA

I^O/II=−100mA / −5mA

V^I= −5V

OUT

Input voltage

Output voltage

Input current

−60

−

−300

−1.4

−0.5

−

µA

−

GND(+)

OUT

Output current

DC current gain

Transition frequency

Input resistance

Resistance ratio

IO(off)

−

V^CC=−12V, VI=0V

V^O=−2V, IO=−100mA

115

−

∗

260

4.7

1.0

−

MHz V^CE=−10V

IE=5mA, f=100MHz

GND(+)

3.29

0.8

6.11

1.2

kΩ

−

R2/R1

−

=4.7kΩ / R =4.7kΩ

∗ Characteristics of built-in transistor.

1/1

中文翻译

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与DTB543EM相关器件

型号	品牌	获取价格	描述	数据表
DTB543EMT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
DTB543XE	ROHM	获取价格	-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
DTB543XETL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SC-75A,
DTB543XM	ROHM	获取价格	-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
DTB543ZE	ROHM	获取价格	-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
DTB543ZE3	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTB543ZE3 (新产品)	ROHM	获取价格	These are the standard products of "digital transistors" which ROHM invented and marketed
DTB543ZETL	ROHM	获取价格	暂无描述
DTB543ZM	ROHM	获取价格	-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)
DTB543ZMT2L	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO

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