Datasheet > DTB523YE_10

DTB523YE_10

更新时间： 2024-09-24 06:54:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
3页	157K
描述
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)

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DTB523YE_10 数据手册

-500mA / -12V Low V_CE(sat) Digital transistors

(with built-in resistors)

DTB523YE / DTB523YM

Applications

Dimensions (Unit : mm)

Inverter, Interface, Driver

DTB523YE

0.7

1.6

0.55

0.3

Feature

( )

1) V^CE(sat) is lower than conventional products.

2) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see equivalent circuit).

3) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of

almost completely eliminating parasitic effects.

4) Only the on / off conditions need to be set for operation,

making the device design easy.

(

)

( )

0.2

0.15

(1) GND

(2) IN

(3) OUT

0.5

1.0

EMT3

JEITA No. (SC-75A)

JEDEC No. <SOT-416>

Each lead has same dimensions

Abbreviated symbol : X53

DTB523YM

1.2

0.32

(3)

Structure

PNP epitaxial plannar silicon transistor

(Resistor built-in type)

(

)( )

0.22

(1) IN

(2) GND

(3) OUT

0.13

0.4 0.4

0.5

0.8

VMT3

Each lead has same dimensions

Abbreviated symbol : X52

Packaging specifications

Package

EMT3

Taping

VMT3

Taping

T2L

Packaging type

Code

Basic ordering

unit (pieces)

3000

8000

Part No.

DTB523YE

DTB523YM

−

Absolute maximum ratings (Ta=25C)

Inner circuit

Limits

Parameter

Symbol

Unit

DTB523YE DTB523YM

OUT

Supply voltage

C (max)

−12

−12 to +5

−500

Input voltage

GND(+)

OUT

∗1

∗2

Collector current

Power dissipation

Junction temperature

Storage temperature

150

Tstg

150

GND(+)

−55 to +150

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

=2.2kΩ / R =10kΩ

www.rohm.com

2010.01- Rev.C

1/2

12 3

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