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DTB523YE

更新时间： 2024-11-25 03:30:43
品牌 Logo 应用领域
罗姆 - ROHM 晶体电阻器数字晶体管
页数 文件大小 规格书
2页 59K
描述
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)

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DTB523YE 数据手册

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DTB523YE / DTB523YM  
Transistors  
-500mA / -12V Low VCE (sat) Digital transistors  
(with built-in resistors)  
DTB523YE / DTB523YM  
zApplications  
zExternal dimensions (Unit : mm)  
Inverter, Interface, Driver  
DTB523YE  
0.7  
1.6  
0.3  
0.55  
zFeature  
( )  
3
1) VCE (sat) is lower than conventional products.  
2) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
(
)
( )  
1
2
0.2  
0.2  
0.15  
(1) GND  
(2) IN  
(3) OUT  
0.5 0.5  
1.0  
EMT3  
JEITA No. (SC-75A)  
JEDEC No. <SOT-416>  
Each lead has same dimensions  
3) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
Abbreviated symbol : X53  
DTB523YM  
1.2  
0.32  
4) Only the on / off conditions need to be set for  
operation, making the device design easy.  
(3)  
( )( )  
1 2  
0.22  
(1) IN  
(2) GND  
(3) OUT  
0.13  
0.4 0.4  
0.5  
zStructure  
PNP epitaxial plannar silicon transistor  
(Resistor built-in type)  
0.8  
VMT3  
Each lead has same dimensions  
Abbreviated symbol : X53  
zAbsolute maximum ratings (Ta=25°C)  
zPackaging specifications  
Package  
EMT3  
Taping  
TL  
VMT3  
Taping  
T2L  
Limits  
Parameter  
Supply voltage  
Symbol  
Unit  
Packaging type  
Code  
DTB523YE DTB523YM  
V
CC  
IN  
C (max)  
V
V
−12  
−12 to +5  
−500  
Basic ordering  
unit (pieces)  
Input voltage  
V
3000  
8000  
Part No.  
∗1  
∗2  
Collector current  
Power dissipation  
Junction temperature  
Storage temperature  
I
mA  
mW  
C
DTB523YE  
DTB523YM  
−
P
D
150  
−
Tj  
Tstg  
150  
C
−55 to +150  
∗1 Characteristics of built-in transistor.  
∗2 Each terminal mounted on a recommended land.  
zElectrical characteristics (Ta=25°C)  
zEquivalent circuit  
Parameter  
Symbol Min.  
Typ. Max. Unit  
Conditions  
=−100µA  
=−20mA  
= −100mA / −5mA  
= −5V  
CC= −12V, V  
V
V
I(off)  
−
−2.5  
−
−
−
−0.3  
−
V
CC=−5V, I  
O
OUT  
R1  
Input voltage  
V
IN  
I(on)  
V
O
=−0.3V, I  
O
R2  
Output voltage  
Input current  
V
O(on)  
−60  
−
−300  
−3.0  
−0.5  
−
mV  
mA  
µA  
−
I
O
/I  
I
I
I
−
V
V
V
V
I
GND(+)  
OUT  
Output current  
DC current gain  
Transition frequency  
Input resistance  
Resistance ratio  
I
O(off)  
−
−
I
=0V  
G
I
140  
−
−
O
= −2V, I  
O
=−100mA  
IN  
∗
f
T
260  
2.2  
4.5  
−
MHz  
kΩ  
−
CE=−10V  
,
I
E
=5mA, f=100MHz  
GND(+)  
R1  
1.54  
3.6  
2.86  
5.5  
−
−
R
2/R1  
R1  
=2.2kΩ / R =10kΩ  
2
∗ Characteristics of built-in transistor.  
1/1  
12

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