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DTB513ZE PDF预览

DTB513ZE

更新时间： 2024-09-24 03:30:43
品牌 Logo 应用领域
罗姆 - ROHM 晶体电阻器数字晶体管
页数 文件大小 规格书
2页 59K
描述
-500mA / -12V Low VCE (sat) Digital transistors (with built-in resistors)

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中文翻译

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DTB513ZE 数据手册

 浏览型号DTB513ZE的Datasheet PDF文件第2页 
DTB513ZE / DTB513ZM  
Transistors  
-500mA / -12V Low VCE (sat) Digital transistors  
(with built-in resistors)  
DTB513ZE / DTB513ZM  
zApplications  
zExternal dimensions (Unit : mm)  
Inverter, Interface, Driver  
DTB513ZE  
0.7  
1.6  
0.3  
0.55  
zFeature  
( )  
3
1) VCE (sat) is lower than conventional products.  
2) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
(
)
( )  
1
2
0.2  
0.2  
0.15  
(1) GND  
(2) IN  
(3) OUT  
0.5 0.5  
1.0  
EMT3  
JEITA No. (SC-75A)  
JEDEC No. <SOT-416>  
Each lead has same dimensions  
3) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
4) Only the on / off conditions need to be set for  
operation, making the device design easy.  
zStructure  
Abbreviated symbol : Y11  
DTB513ZM  
1.2  
0.32  
(3)  
( )( )  
1 2  
0.22  
(1) IN  
(2) GND  
(3) OUT  
0.13  
0.4 0.4  
0.5  
0.8  
VMT3  
PNP epitaxial plannar silicon transistor  
(Resistor built-in type)  
Each lead has same dimensions  
Abbreviated symbol : Y11  
zAbsolute maximum ratings (Ta=25°C)  
zPackaging specifications  
Package  
EMT3  
Taping  
TL  
VMT3  
Taping  
T2L  
Limits  
Parameter  
Supply voltage  
Symbol  
Unit  
Packaging type  
Code  
DTB513ZE DTB513ZM  
V
CC  
IN  
C (max)  
V
V
−12  
−10 to +5  
−500  
Basic ordering  
unit (pieces)  
Input voltage  
V
3000  
8000  
Part No.  
∗1  
∗2  
Collector current  
Power dissipation  
Junction temperature  
Storage temperature  
I
mA  
mW  
C
DTB513ZE  
DTB513ZM  
−
P
D
150  
−
Tj  
Tstg  
150  
C
−55 to +150  
∗1 Characteristics of built-in transistor.  
∗2 Each terminal mounted on a recommended land.  
zElectrical characteristics (Ta=25°C)  
zEquivalent circuit  
Parameter  
Symbol Min.  
Typ. Max. Unit  
Conditions  
=−100µA  
=−20mA  
=−100mA / −5mA  
= −5V  
CC=−12V, V  
=−2V, I =−100mA  
CE=−10V  
V
I(off)  
−
−2.5  
−
−
−
−0.3  
−
V
V
CC=−5V, I  
O
OUT  
Input voltage  
V
R1  
V
I(on)  
O
=−0.3V, I  
O
IN  
Output voltage  
Input current  
V
O(on)  
−60  
−
−300  
−6.4  
−0.5  
−
mV  
mA  
µA  
−
I
O
/I  
I
R2  
I
I
−
V
V
V
V
I
GND(+)  
OUT  
Output current  
DC current gain  
Transition frequency  
Input resistance  
Resistance ratio  
I
O(off)  
−
−
I=0V  
G
I
140  
−
−
O
O
IN  
∗
f
T
260  
1.0  
10  
−
MHz  
kΩ  
−
,
I
E
=5mA, f=100MHz  
GND(+)  
R1  
0.7  
8.0  
1.3  
12  
−
−
R
2/R1  
∗ Characteristics of built-in transistor.  
R1  
=1.0kΩ / R =10kΩ  
2
1/1  
12

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