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DTA144EE-TP-HF PDF预览

DTA144EE-TP-HF

更新时间: 2024-11-02 20:09:51
品牌 Logo 应用领域
美微科 - MCC 开关光电二极管晶体管
页数 文件大小 规格书
3页 195K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

DTA144EE-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.58
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC):0.1 A
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):68
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

DTA144EE-TP-HF 数据手册

 浏览型号DTA144EE-TP-HF的Datasheet PDF文件第2页浏览型号DTA144EE-TP-HF的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DTA144EE  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
PNP  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors  
Digital Transistors  
The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects.  
Only the on/off conditions need to be set for operation, making  
SOT-523  
A
device design easy  
·
Halogen free available upon request by adding suffix "-HF"  
Absolute maximum ratings @ 25R  
D
Symbol  
VCC  
VIN  
Parameter  
Supply voltage  
Min  
---  
-40  
Typ  
-50  
---  
Max  
---  
10  
Unit  
V
V
3
1. IN  
2. GND  
3. OUT  
C
B
1
2
Input voltage  
IO  
IC(MAX)  
Pd  
Tj  
-30  
-100  
150  
150  
---  
Output current  
---  
---  
mA  
E
Power dissipation  
Junction temperature  
Storage temperature  
---  
---  
---  
---  
mW  
?
Tstg  
-55  
150  
?
Electrical Characteristics @ 25R  
H
G
J
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
IO(off)  
GI  
R1  
Parameter  
Min  
---  
-3.0  
---  
---  
---  
68  
32.9  
0.8  
Typ  
---  
---  
---  
---  
---  
---  
47  
1.0  
Max  
-0.5  
---  
-0.3  
-0.18  
-0.5  
---  
Unit  
V
V
K
Input voltage (VCC=-5V, IO=-100IA)  
(VO=-0.3V, IO=-2mA)  
DIMENSIONS  
Output voltage (IO/II=-10mA/-0.5mA  
Input current (VI=-5V)  
V
INCHES  
MAX  
MM  
mA  
IA  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
MIN  
1.50  
0.75  
1.45  
MAX  
1.70  
0.85  
1.75  
NOTE  
Output current (VCC=-50V, VI=0)  
DC current gain (VO=-5V, IO=-5mA)  
Input resistance  
Resistance ratio  
Transition frequency  
.059  
.030  
.057  
.067  
.033  
.069  
61.1  
1.2  
K=  
.020 Nominal  
0.50Nominal  
0.90  
.000  
.70  
.100  
.25  
R2/R1  
.035  
.000  
.028  
.004  
.010  
.043  
.004  
.031  
.008  
.014  
1.10  
.100  
0.80  
.200  
.35  
fT  
---  
250  
---  
MHz  
(VCE=-10V, IE=5mA, f=100MHz)  
*Marking: 16  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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