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DTA123YE_09 PDF预览

DTA123YE_09

更新时间: 2024-01-28 18:36:13
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
3页 141K
描述
-100mA / -50V Digital transistors (with built-in resistors)

DTA123YE_09 数据手册

 浏览型号DTA123YE_09的Datasheet PDF文件第2页浏览型号DTA123YE_09的Datasheet PDF文件第3页 
-100mA / -50V Digital transistors  
(with built-in resistors)  
DTA123YE / DTA123YUA / DTA123YKA  
Applications  
Dimensions (Unit : mm)  
Inverter, Interface, Driver  
DTA123YE  
0.7  
1.6  
0.3  
Features  
0.55  
1)Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
(
)
3
(
)
( )  
1
2
2)The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
3)Only the on/off conditions need to be set for operation,  
making the device design easy.  
0.2  
0.2  
0.15  
0.5  
0.5  
(1) GND  
(2) IN  
(3) OUT  
1.0  
Abbreviated symbol : 52  
ROHM : EMT3  
DTA123YUA  
2.0  
0.9  
0.7  
0.2  
0.3  
Structure  
PNP epitaxial planar silicon transistor  
(Resistor built-in type)  
(
)
3
(
)
2
( )  
1
Packaging specifications  
0.650.65  
1.3  
(1) GND  
(2) IN  
(3) OUT  
0.15  
Package  
Package type  
Code  
EMT3  
Taping  
TL  
UMT3  
Taping  
T106  
SMT3  
Taping  
T146  
ROHM : UMT3  
EIAJ : SC-70  
Each lead has same dimensions  
Abbreviated symbol : 52  
2.9  
0.4  
1.1  
0.8  
Basic ordering  
unit (pieces)  
3000  
3000  
3000  
Part No.  
DTA123YKA  
DTA123YE  
DTA123YUA  
DTA123YKA  
( )  
3
( )  
2
( )  
1
0.95 0.95  
0.15  
Absolute maximum ratings (Ta=25C)  
(1) GND  
(2) IN  
(3) OUT  
1.9  
Limits  
Parameter  
Symbol  
Unit  
ROHM : SMT3  
EIAJ : SC-59  
DTA123YE DTA123YUA DTA123YKA  
Each lead has same dimensions  
Abbreviated symbol : 52  
Supply voltage  
Input voltage  
V
CC  
50  
12 to +5  
100  
V
V
V
IN  
I
O
Inner circuit  
Output current  
mA  
I
C(Max.)  
100  
Power dissipation  
P
D
150  
200  
mW  
°C  
OUT  
R
1
Junction temperature  
Storage temperature  
Tj  
Tstg  
150  
55 to +150  
IN  
°C  
R
2
GND(+)  
OUT  
IN  
GND(+)  
R1  
=2.2kΩ R =10kΩ  
2
www.rohm.com  
2009.06 - Rev.B  
1/2  
c
2009 ROHM Co., Ltd. All rights reserved.  

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