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DTA123JKAP

更新时间: 2024-02-20 04:59:30
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
3页 115K
描述
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, SOT-23, 3 PIN

DTA123JKAP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.82
其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):33JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

DTA123JKAP 数据手册

 浏览型号DTA123JKAP的Datasheet PDF文件第2页浏览型号DTA123JKAP的Datasheet PDF文件第3页 
M C C  
TM  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
DTA123JCA  
Features  
 Epitaxial Planar Die Construction  
 Complementary NPN Types Available  
 Built-In Biasing Resistors  
Digital Transistors  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
SOT-23  
A
Absolute maximum ratings @ 25  
D
Symbol  
VCC  
VIN  
Parameter  
Min  
---  
Typ  
50  
Max  
---  
Unit  
V
3
Supply voltage  
Input voltage  
-5  
---  
---  
+12  
---  
V
B
C
Pd  
Power dissipation  
Junction temperature  
200  
150  
mW  
1:IN  
Tj  
---  
---  
2
1
2:GND  
3:OUT  
Tstg  
IO  
Storage temperature  
-55  
---  
150  
F
E
100  
100  
Output current  
mA  
IC(MAX)  
Electrical Characteristics @ 25  
H
G
J
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Parameter  
Input voltage (VCC=5V, IO=100μA)  
(VO=0.3V, IO=5mA)  
Min  
---  
Typ  
---  
Max  
0.5  
---  
Unit  
V
K
1.1  
---  
---  
V
DIMENSIONS  
MM  
Output voltage (IO=5mA,Ii=0.25mA)  
Input current (VI=5V)  
0.1  
---  
0.3  
3.6  
0.5  
---  
V
---  
mA  
μA  
INCHES  
MIN  
IO(off)  
GI  
Output current (VCC=50V, VI=0)  
DC current gain (VO=5V, IO=10mA)  
Input resistance  
---  
---  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
80  
---  
R1  
1.54  
17  
2.2  
21  
2.86  
26  
KΩ  
R2/R1  
Resistance ratio  
Transition frequency  
(VCE=10V, IE=5mA, f=100MHz)  
fT  
---  
250  
---  
MHz  
F
G
H
J
.100  
1.12  
.180  
.51  
.085  
.37  
K
Suggested Solder  
Pad Layout  
.031  
.800  
.035  
.900  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: 1  
2007/01/29  

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