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DTA123EKA PDF预览

DTA123EKA

更新时间: 2024-11-18 22:14:03
品牌 Logo 应用领域
乐山 - LRC 晶体数字晶体管开关光电二极管
页数 文件大小 规格书
2页 75K
描述
Digital transistors(built-in resistors)

DTA123EKA 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.41
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):20
元件数量:1极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON
Base Number Matches:1

DTA123EKA 数据手册

 浏览型号DTA123EKA的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
Digital transistors (built-in resistors)  
Features  
DTA123EKA  
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting  
external input resistors (see equivalent circuit).  
2) The bias resistors consist of thinfilm resistors with complete isola-tion to allow positive  
biasing of the input. They also have the advantage of almost completely eliminating  
parasitic effects.  
3) Only the on/ off conditions need to be set for operation, making device design easy.  
Equivalent circuit  
+
2.9 0.2  
+
1.1 +- 0.2  
0.1  
1.9 0.2  
+
0.95 0.95  
+
0.8 0.1  
R1  
OUT  
IN  
(2)  
(1)  
R2  
0 ~ 0.1  
GND(+)  
OUT  
(3)  
IN  
(1) GND  
(2) IN  
0.1  
0.06  
0.15 +-  
0.4 +  
GND(+)  
0.1  
0.05  
-
(3) OUT  
All terminals have same dimensions  
EIAJ: SC— 59  
Absolute maximum ratings(Ta=25 °C)  
Parameter  
symbol  
limits  
unit  
Supply voltage  
Input voltage  
V
–50  
–12~+10  
–100  
V
V
cc  
V
IN  
I O  
I C(Max.)  
Pd  
Output current  
mA  
–100  
Power dissipation  
200  
mW  
°C  
Junction temperature  
Storage temperature  
T j  
150  
T stg  
–55~+150  
°C  
Elecricalcharacteristics(Ta=25°C  
)
Parameter  
symbol  
V I(off)  
V I(on)  
VO(on)  
I I  
Min.  
Typ.  
Max.  
–0.5  
Unit  
V
Conditions  
VCC= – 5V,IO= –100µA  
Inputvoltage  
–3  
VO= – 0.3V,IO= – 20mA  
IO/II=10mA/–0.5mA  
VI= – 5V  
OutputVoltage  
–0.1  
–0.3  
–3.8  
–0.5  
V
Inputcurrent  
mA  
Outputcurrent  
IO(off)  
G I  
µ
A
VCC= – 50V,VI= 0 V  
VO= – 5V,IO= – 20mA  
DCcurrentgain  
20  
K  
Inputresistance  
R1  
1.54  
0.8  
2.2  
1
2.86  
1.2  
Resistanceratio  
R 2 / R 1  
f T  
Transitionfrequency  
*Transition frequency of the device  
250  
MHz  
VCE=10V,IE=5mA,f=100MHz*  
P6–1/2  

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