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DTA115ES3 PDF预览

DTA115ES3

更新时间: 2024-09-24 04:39:23
品牌 Logo 应用领域
全宇昕 - CYSTEKEC 晶体数字晶体管
页数 文件大小 规格书
4页 165K
描述
NPN Digital Transistors (Built-in Resistors)

DTA115ES3 数据手册

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Spec. No. : C356S3  
Issued Date : 2004.03.03  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/4  
NPN Digital Transistors (Built-in Resistors)  
DTC115ES3  
Features  
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input  
resistors (see equivalent circuit).  
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the  
input. They also have the advantage of almost completely eliminating parasitic effects.  
Only the on/off conditions need to be set for operation, making device design easy.  
Complements the DTA115ES3  
Equivalent Circuit  
Outline  
DTC115ES3  
SOT-323  
R1=100k, R2=100 kΩ  
IN(B) : Base  
OUT(C) : Collector  
GND(E) : Emitter  
Absolute Maximum Ratings (Ta=25)  
Parameter  
Symbol  
Limits  
50  
Unit  
V
Supply Voltage  
VCC  
VIN  
IO  
Input Voltage  
-10~+40  
20  
V
mA  
mA  
mW  
°C  
Output Current  
IO(max.)  
Pd  
100  
Power Dissipation  
Junction Temperature  
Storage Temperature  
200  
Tj  
150  
Tstg  
-55~+150  
°C  
DTC115ES3  
CYStek Product Specification  

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