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DTA114YKA PDF预览

DTA114YKA

更新时间: 2024-02-23 01:48:07
品牌 Logo 应用领域
乐山 - LRC 晶体数字晶体管
页数 文件大小 规格书
2页 75K
描述
Digital transistors(built-in resistors)

DTA114YKA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC):0.07 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):68
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTA114YKA 数据手册

 浏览型号DTA114YKA的Datasheet PDF文件第2页 
LESHAN RADIO COMPANY, LTD.  
Digital transistors (built-in resistors)  
Features  
1) Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors (see equiva-  
lent circuit).  
DTA114YKA  
2) The bias resistors consist of thinfilm resistors with complete  
isolation to allow positive biasing of the input. They also have  
the advantage of almost completely eliminating parasitic  
effects.  
3) Only the on/ off conditions need to be set for operation, mak-  
ing device design easy.  
• Structure  
+
2.9 0.2  
0.2  
+
1.1 +-  
PNP digital transistor (Built-in resistors type)  
•Equivalent circuit  
0.1  
1.9 0.2  
+
0.95 0.95  
+
0.8 0.1  
(2)  
(1)  
0 ~ 0.1  
R1  
OUT  
IN  
(3)  
(1) GND  
(2) IN  
R2  
0.1  
0.06  
0.15 +-  
0.1  
0.05  
0.4 +-  
GND(+)  
OUT  
(3) OUT  
All terminals have same dimensions  
IN  
GND(+)  
EIAJ: SC— 59  
Absolute maximum ratings(Ta=25 °C)  
Parameter  
symbol  
limits  
unit  
Supply voltage  
Input voltage  
V
–50  
–40~+6  
–70  
V
V
cc  
V
IN  
I O  
I C(Max.)  
Pd  
Output current  
mA  
–100  
Power dissipation  
200  
mW  
°C  
Junction temperature  
Storage temperature  
T j  
150  
T stg  
–55~+150  
°C  
Elecrical characteristics(Ta=25°C)  
Parameter  
symbol  
Min.  
Typ.  
Max.  
–0.3  
Unit  
V
Conditions  
V
VCC= – 5V,IO= –100µA  
VO= – 0.3V,IO=–1mA  
IO/II=–5mA/–0.25mA  
VI= – 5V  
I(off)  
Input voltage  
V I(on)  
V O(on)  
I I  
–1.4  
Output Voltage  
–0.1  
–0.3  
–0.88  
–0.5  
V
mA  
µA  
Input current  
Output current  
I O(off)  
G I  
VCC=– 50V,VI= 0 V  
VO= – 5V,IO=– 5mA  
DC current gain  
68  
7
Input resistance  
R1  
10  
13  
K  
Resistance ratio  
R 2 / R 1  
3.7  
4.7  
250  
5.7  
Transition frequency  
*Transition frequency of the device  
f
MHz  
VCE= –10V,IE= 5 mA,f=100MHz*  
T
P4–1/2  

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