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DTA114YET1 PDF预览

DTA114YET1

更新时间: 2024-02-27 09:46:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
12页 215K
描述
Bias Resistor Transistor

DTA114YET1 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-75包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:0.95Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DTA114YET1 数据手册

 浏览型号DTA114YET1的Datasheet PDF文件第2页浏览型号DTA114YET1的Datasheet PDF文件第3页浏览型号DTA114YET1的Datasheet PDF文件第4页浏览型号DTA114YET1的Datasheet PDF文件第5页浏览型号DTA114YET1的Datasheet PDF文件第6页浏览型号DTA114YET1的Datasheet PDF文件第7页 
Preferred Devices  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the  
SC–75/SOT–416 package which is designed for low power surface  
mount applications.  
http://onsemi.com  
PNP SILICON  
BIAS RESISTOR  
TRANSISTORS  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
COLLECTOR  
3
The SC–75/SOT–416 package can be soldered using  
wave or reflow. The modified gull–winged leads absorb  
thermal stress during soldering eliminating the possibility  
of damage to the die.  
1
BASE  
2
EMITTER  
Available in 8 mm, 7 inch/3000 Unit Tape & Reel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
3
V
CBO  
V
CEO  
50  
Vdc  
2
1
I
C
100  
mAdc  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
CASE 463  
SOT–416/SC–75  
STYLE 1  
DTA114EET1  
DTA124EET1  
DTA144EET1  
DTA114YET1  
DTA114TET1  
DTA143TET1  
DTA123EET1  
DTA143ZET1  
DTA124XET1  
DTA123JET1  
6A  
6B  
6C  
6D  
6E  
6F  
6H  
6K  
6L  
10  
22  
47  
10  
10  
4.7  
2.2  
4.7  
22  
10  
22  
47  
47  
3000/Tape & Reel  
Preferred devices are recommended choices for future use  
and best overall value.  
2.2  
47  
47  
47  
6M  
2.2  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 0  
DTA114EET1/D  

DTA114YET1 替代型号

型号 品牌 替代类型 描述 数据表
DTA114YET1G ONSEMI

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