Datasheet > DTA114TE

DTA114TE

更新时间： 2024-09-25 12:33:35

品牌	Logo	应用领域
TYSEMI		晶体电阻器晶体管光电二极管
页数	文件大小	规格书
2页	155K
描述
Built-In Bias Resistors Enable The Configuration of An Inverter Circuit Without Connecting External Input Resistors

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DTA114TE 数据手册

SMD Type

Product specification

DTA114TE

Features

PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.)

Built-In Bias Resistors Enable The Configuration of An Inverter

Circuit Without Connecting External Input Resistors

(See Equivalent Circuit).

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-50

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-50

-5

-100

Collector Power Dissipation

Junction temperature

Storage temperature

P^C

150

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

BV^CBO

BV^CEOI^C= -1mA

BV^EBO

I^CBO

Testconditons

Min

-50

-5

Typ

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I^C= -50

I^E= -50

V^CB= -50V

V^EB= -4V

-0.5

-0.3

600

Emitter Cut-off Current

I^EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Input Resistance

V^CE(sat)I^C= -10mA , I^B= -1mA

h^FE

R¹

V^CE= -5V , I^C= -1mA

100

250

Transistion Frequency

f^T*

V^CE= -10V , I^E= 5mA , f = 100MHz

250

MHz

* Characteristics of built-in transistor

Marking

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sales@twtysemi.com

4008-318-123

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