Datasheet > DTA114TCA_11

DTA114TCA_11

更新时间： 2024-09-25 09:58:03

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	199K
描述
PNP Digital Transistor

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中文翻译

获取价格

数据手册

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DTA114TCA_11 数据手册

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

DTA114TCA

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

PNP Digital Transistor

xꢀ Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

xꢀ The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

xꢀ Only the on/off conditions need to be set for operation, making

device design easy

SOT-23

Absolute Maximum Ratings

Parameter

Collector-Base Voltage

1. Base

Symbol

V_CBO

Value

-50

Unit

2. Emitter

3. Collector

Collector-Emitter Voltage

Emitter-Base voltage

V_CEO

V_EBO

I_C

-50

-5

Collector Current-Continuous

-100

Collector Dissipation

P_C

200

Junction Temperature Range

Storage Temperature Range

T_J

-55~150

T_STG

DIMENSIONS

Electrical Characteristics

INCHES

MIN

DIM

MAX

MIN

2.80

2.10

1.20

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

Sym

Parameter

Collector-Base Breakdown Voltage

(I_C=-50uA, I_E=0)

Min

Typ

Max

Unit

.110

.083

.047

.035

.070

.018

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

V_(BR)CBO

-50

---

Collector-Emitter Breakdown Voltage

(I_C=-1mA, I_B=0)

V_(BR)CEO

V_(BR)EBO

I_CBO

-50

-5

---

1.78

.45

Emitter-Base Breakdown Voltage

(I_E=-50uA, I_C=0)

---

.0005

.035

.003

.015

.013

.89

.100

1.12

.180

.51

Collector Cut-off Current

(V_CB=-50V, I_E=0)

.085

.37

---

-0.5

600

---

Emitter Cut-off Current

(V_EB=-4V, I_C=0)

I_EBO

---

Suggested Solder

Pad Layout

DC Current Gain

(V_CE=-5V, I_C=-1mA)

h_FE

100

250

.031

.800

Collector-Emitter Saturation Voltage

(I_C=-10mA, I_B=-1mA)

V_CE(sat)

R₁

---

-0.3

K¡

Input Resistor

.035

.900

Transition Frequency

(V_CE=-10V, I_C=-5mA, f=100MHz)

f_T

---

250

---

MHz

.079

2.000

inches

*Marking: 94

.037

.950

.037

.950

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

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与DTA114TCA_11相关器件

型号	品牌	获取价格	描述	数据表
DTA114TCAHZG	ROHM	获取价格	DTA114TCAHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。
DTA114TCAHZGT116	ROHM	获取价格	Small Signal Bipolar Transistor,
DTA114TCAT116	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
DTA114TCAT117	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL
DTA114TCAT216	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,
DTA114TCA-TP	MCC	获取价格	PNP Digital Transistor
DTA114TCA-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DTA114TE	CJ	获取价格	Digital transistors (built-in resistors)
DTA114TE	MCC	获取价格	PNP Digital Transistor
DTA114TE	HTSEMI	获取价格	TRANSISTOR(PNP)

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