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DTA114TCA PDF预览

DTA114TCA

更新时间: 2024-11-13 06:54:47
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管
页数 文件大小 规格书
3页 107K
描述
PNP Digital Transistor

DTA114TCA 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.19
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

DTA114TCA 数据手册

 浏览型号DTA114TCA的Datasheet PDF文件第2页浏览型号DTA114TCA的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
DTA114TCA  
Micro Commercial Components  
Features  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
PNP Digital Transistor  
xꢀ Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors (see equivalent circuit)  
xꢀ The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects  
xꢀ Only the on/off conditions need to be set for operation, making  
device design easy  
SOT-23  
A
D
Absolute Maximum Ratings  
Parameter  
Collector-Base Voltage  
3
1. Base  
2. Emitter  
3. Collector  
B
C
Symbol  
VCBO  
Value  
-50  
Unit  
V
1
2
Collector-Emitter Voltage  
Emitter-Base voltage  
VCEO  
VEBO  
IC  
-50  
-5  
V
V
F
E
Collector Current-Continuous  
-100  
mA  
Collector Dissipation  
PC  
200  
mW  
H
G
J
к
к
Junction Temperature Range  
Storage Temperature Range  
TJ  
-55~150  
-55~150  
TSTG  
K
DIMENSIONS  
MM  
Electrical Characteristics  
INCHES  
MIN  
DIM  
A
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
Sym  
Parameter  
Collector-Base Breakdown Voltage  
(IC=-50uA, IE=0)  
Min  
Typ  
Max  
Unit  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
V(BR)CBO  
-50  
---  
---  
V
B
C
D
E
Collector-Emitter Breakdown Voltage  
(IC=-1mA, IB=0)  
V(BR)CEO  
V(BR)EBO  
ICBO  
-50  
-5  
---  
---  
---  
V
1.78  
.45  
F
Emitter-Base Breakdown Voltage  
(IE=-50uA, IC=0)  
---  
V
G
H
J
.013  
.89  
.100  
1.12  
.180  
.51  
Collector Cut-off Current  
(VCB=-50V, IE=0)  
.085  
.37  
---  
---  
-0.5  
-0.5  
600  
uA  
uA  
---  
K
Emitter Cut-off Current  
(VEB=-4V, IC=0)  
IEBO  
---  
---  
Suggested Solder  
Pad Layout  
DC Current Gain  
(VCE=-5V, IC=-1mA)  
hFE  
100  
250  
.031  
.800  
Collector-Emitter Saturation Voltage  
(IC=-10mA, IB=-1mA)  
VCE(sat)  
R1  
---  
7
---  
10  
-0.3  
13  
V
Input Resistor  
K¡  
MHz  
.035  
.900  
Transition Frequency  
(VCE=-10V, IC=-5mA, f=100MHz)  
fT  
---  
250  
---  
.079  
2.000  
inches  
mm  
*Marking: 94  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: 3  
2009/02/11  

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