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DTA114EM PDF预览

DTA114EM

更新时间: 2024-09-17 09:57:59
品牌 Logo 应用领域
科信 - KEXIN 晶体数字晶体管开关光电二极管
页数 文件大小 规格书
3页 179K
描述
Digital Transistors

DTA114EM 数据手册

 浏览型号DTA114EM的Datasheet PDF文件第2页浏览型号DTA114EM的Datasheet PDF文件第3页 
SMD Type  
Transistors  
Digital Transistors  
DTA114EM  
Features  
PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.)  
Built-In Bias Resistors Enable The Configuration of An Inverter  
Circuit Without Connecting External Input Resistors  
(See Equivalent Circuit).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VCC  
VIN  
Rating  
-50  
Unit  
V
Supply Voltage  
Input Voltage  
-40 to +10  
-50  
V
IO  
Output Current  
mA  
IC(Max)  
PD  
-100  
Power Dissipation  
150  
mW  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
VCC = -5V , IO = -100  
VO = -0.3V , IO = -10mA  
Min  
-3  
Typ  
Max  
-0.5  
Unit  
V
VI(off)  
VI(on)  
A
Input Voltage  
Output Voltage  
VO(on) IO/II = -10mA/-0.5mA  
-0.3  
V
Input Current  
II  
IO(off)  
GI  
VI = -5V  
-0.88 mA  
Output Current  
VCC = -50V , VI = 0V  
VO = -5V , IO = -5mA  
-0.5  
A
DC Current Gain  
30  
7
Input Resistance  
R1  
10  
1
13  
k
Resistance Ratio  
R2/R1  
fT *  
0.8  
1.2  
Transistion Frequency  
* Characteristics of built-in transistor  
VCE = -10V , IE = 5mA , f = 100MHz  
250  
MHz  
Marking  
Marking  
14  
1
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