Datasheet > DTA114ECA

DTA114ECA

更新时间： 2024-11-18 12:53:51

品牌	Logo	应用领域
TYSEMI		晶体电阻器晶体管
页数	文件大小	规格书
3页	329K
描述
Built-In Bias Resistors Enable The Configuration of An Inverter Circuit Without Connecting External Input Resistors

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DTA114ECA 数据手册

SMD Type

Product specification

DTA114ECA

Features

PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.)

Built-In Bias Resistors Enable The Configuration of An Inverter

Circuit Without Connecting External Input Resistors

(See Equivalent Circuit).

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^CC

V^IN

Rating

-50

Unit

Supply Voltage

Input Voltage

-40 to +10

-50

I^O

Output Current

I^C(Max)

P^D

-100

Power Dissipation

200

Junction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

V^CC= -5V , I^O= -100

V^O= -0.3V , I^O= -10mA

Min

-3

Typ

Max

-0.5

Unit

V^I(off)

V^I(on)

Input Voltage

Output Voltage

V^O(on)I^O/I^I= -10mA/-0.5mA

-0.3

Input Current

I^I

I^O(off)

G^I

V^I= -5V

-0.88 mA

Output Current

V^CC= -50V , V^I= 0V

V^O= -5V , I^O= -5mA

-0.5

DC Current Gain

Input Resistance

R¹

Resistance Ratio

R²/R¹

f^T*

0.8

1.2

Transistion Frequency

* Characteristics of built-in transistor

V^CE= -10V , I^E= 5mA , f = 100MHz

250

MHz

Marking

http://www.twtysemi.com

1 of 3

sales@twtysemi.com

4008-318-123

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